BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SMD Type
Schottky barrier (double) diodes
BAS70 series
Diodes
Features
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Symbol
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
Rth j-a
Conditions
tp 1 s; ä 0.5
tp < 10 ms
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Min
Max
Unit
70
V
70
mA
70
mA
100
mA
-65
+150
150
-65
+150
500
K/W
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse voltage leakage current
Charge carrier life tim e (Krakauer m ethod)
Diode capacitance
Note
1. Pulse test: tp = 300 s; ä = 0.02
Sym bol
VF
IR
Cd
Conditions
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 50 V; note 1
VR = 70 V; note 1
IF = 5 mA
f = 1 MHz; VR = 0;
Max
410
750
1
100
10
100
2
Unit
mV
mV
V
nA
A
ps
pF
Marking
Type
Marking
BAS70
73*
BAS70-04
74*
BAS70-05
75*
BAS70-06
76*
BAS70-07
77p
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