BAS511 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Switching Diodes

SMD Type
Switching Diodes
BAS511 (KAS511)
■ Features
● Silicon epitaxial planar diode
● High switching speed: trr≤4ns
● Low forward drop voltage and low leakage current
● “Green” device and RoHS compliant device
● Available in full lead (Pb)-free device
SOD-323
1.7 +0.1
-0.1
2.6 +0.1
-0.1
0.475
0.375
Diodes
Unit: mm
0.85 ^+0.05
-0.05
1.0max
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Average Forward Rectified Current
Forward Current
Peak Forward Surge Current
Non-repetitive peak forward surge current(t=10ms)
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VRM
VR
IO
IF
IFM
IFSM
Pd
RθJA
TJ
Tstg
Rating
85
80
100
100
300
2
150
830
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Reverse breakdown voltage
VR IR= 100 uA
VF1 IF= 1 mA
Forward voltage
(Note.1)
VF2 IF= 10 mA
VF3 IF= 100 mA
Reverse voltage leakage current
IR1 VR= 80 V (Note.2)
Junction capacitance
Cj VR= 0 V, f= 1 MHz
Reverse recovery time
trr
IF=10mA
Note.1: Pulse test: tP≤380us, Duty cycle≤2%
Note.2: Pulse test: tP≤5ms, Duty cycle≤2%
■ Marking
Marking
S1*
Unit
V
mA
A
mW
℃/W
℃
Min Typ Max Unit
85
0.6
V
0.7
0.9 1.2
0.5 uA
4
pF
4 ns
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