BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

SMD Type
■ Features
● Low Forward Voltage
● Fast Switching
Schottky Diodes
BAS40/-04/-05/-06
(KAS40/-04/-05/-06)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Diodes
Unit: mm
0.1 ^+0.05
-0.01
BAS40
BAS40-06
BAS40-05
BAS40-04
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VRRM
VRWM
VR
IFM
Pd
RθJA
TJ
Tstg
Rating
40
200
200
500
125
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF1 IF= 1mA
VF2 IF= 40 mA
IR1 VR= 30 V
Cj VR= 0 V, f= 1 MHz
trr IF=IR=10mA,Irr=1mA, RL=100Ω
Min Typ Max Unit
40
0.38 V
1
200 nA
5
pF
5 ns
■ Marking
NO
Marking
. BAS40
43
BAS40-06
46
BAS40-05
45
BAS40-04
44
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