BAS40-07W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping)

SMD Type
Silicon Schottky Diode
BAS40-07W
Diodes
Features
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
SOT-343
Unit: mm
Absolute M axim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Surge forward current, t 10 m s
Total power dissipation, TS 81
Junction tem perature
Operating tem perature range
Storage tem perature
Junction - am bient ¹⁾
Junction - soldering point
Note
1.Package m ounted on epoxy pcb 40m m
Sym bol
VR
IF
IFRM
P tot
Tj
Top
T stg
R thJA
R thJS
V a lu e
40
120
200
250
150
-55 to +150
-55 to +150
345
275
40m m 1.5m m / 6cm ² Cu
U n it
V
mA
mA
A
K/W
K/W
Electrical Characteristics Ta = 25
P aram eter
Symbol
Test Condition
Min
Typ
Max
Unit
Breakdown voltage
V(BR)
I(BR) = 10 A
40
mV
Reverse current
VR = 30 V
IR
VR = 40 V
1
A
10
IF = 1 mA
250
310
380
Forward voltage
VF
IF = 10 mA
350
450
500
mV
IF = 40 mA
600
720
1000
Diode capacitance
CT
f = 1 MHz; VR = 0
4
5
pF
Charge carrier life time
ô
IF = 25 mA
100
ps
Differential forward resistance
RF
IF = 10 mA, f = 10 KHz
10
Marking
Marking
47s
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