BAS16T Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode

SMD Type
Switching Diode
BAS16T;BAW56T
BAV70T;BAV99T
Diodes
Features
Absolute Maximum Ratings Ta = 25
Parameter
Power dissipation
(Ta mb=25 )
Forward Current
Reverse Voltage
Operating and storage junction temperature range
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Symbol
PD
IF
VR
TJ, Tstg
Limits
150
75
85
-55 to +150
Unit
mW
mA
V
Electrical Characteristics Ta = 25
P aram eter
Reverse breakdown voltage
Sym bol
V(BR)
Reverse voltage leakage current
IR
Forward voltage
VF
Diode capacitance
CD
Reverse recovery time
trr
Conditions
IR = 100 A
VR =75 V
VR =25 V
IF =1 mA
IF =10 mA
IF = 50 mA
IF =150 mA
VR=0 V,f=1MHz
Min
Max
Unit
85
V
2
A
0.03
715
855
mV
1000
1250
1.5
pF
4
ns
Marking
Type
Marking
BAS16T
A2
BAW56T
JD
BAV70T
JJ
BAV99T
JE
www.kexin.com.cn ¹