BAS125 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

SMD Type
Silicon Schottky Diodes
BAS125 series
Diodes
Features
For low-loss, fast-recovery, meter
protection,bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Reverse voltage
VR
Forward current
IF
Surge forward current
IFRM
t 10 ms
Total power dissipation
Ptot
Ts < 25 (Note 3)
Junction temperature
Tj
Storage temperature range
Tstg
Junction-ambient
Rth JA
Note 2
Junction-soldering point
Rth JS
Note
1. For detailed information see chapter Package Outlines.
2.Package mounted on alumina 15 mm 16.7 mm 0.7 mm.
3.450 mW per package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Values
25
100
500
250
150
-55 to +150
< 725
< 565
Unit
V
mA
mA
mW
K/W
K/W
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