BAR81W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

SMD Type
Silicon RF Switching Diode
BAR81W
Diodes
Features
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
SOT-343
Unit: mm
Absolute Maximum Ratings Ta = 25
P aram eter
Symbol
Diode reverse voltage
VR
Forward current
IF
Total power dissipation, TS = 103
Ptot
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Junction - ambient ¹⁾
Tstg
Rth JA
Junction - soldering point
Rth JS
Note
1.Package mounted on alumina 15mm 16.7mm 0.7mm
Value
30
100
100
150
-55 to + 125
-55 to + 150
200
120
Unit
V
mA
mW
K/W
K/W
Electrical Characteristics Ta = 25
Parameter
Reverse current
Forward voltage
Symbol
IR
VF
Diode capacitance
CT
Forward resistance
rf
Series inductance
trr
Test Condition
VR = 20 V
IF = 100 mA
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
IF = 5 mA, f = 100 MHz
Min
Typ
Max
Unit
20
nA
0.93
1
V
0.6
pF
0.57
0.7
0.15
nH
Marking
Marking
BBs
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