BAR74 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Switching Diode (For high-speed switching)

SMD Type
Silicon Switching Diode
BAR74
Diodes
Features
For high-speed switching applications
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maxim um Ratings Ta = 25
P aram eter
Reverse voltage
Peak reverse volatge
Forward current
Surege forward current, T = 1 s
Total power dissipation, Ts = 54
Junction temperature
Storage temperature range
Junction ambient (Note 1)
Junction soldering point
Note
1. Package mounted on epoxy pcb 40 mm
Sym bol
VR
VRM
IF
IFS
P tot
Tj
Tstg
Rth JA
Rth JS
Value
50
50
250
4.5
370
150
-65 to +150
330
260
40 mm 1.5 mm/6 cm² Cu.
Unit
V
V
mA
A
mW
K/W
K/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Breakdown voltage
VR
IR =100 A
50
V
Forward voltage
VF
IF = 100 mA
1
V
Reverse current
IR
VR = 50 V
VR = 50 V,Ta = 150
0.1
A
100
Diode capacitance
CD
VR = 0 V,f = 1 MHz
2
pF
Reverse recovery time
trr IF = IR = 10 mA,RL = 100 ,measured at IR = 1 mA
4
ns
Marking
Marking
JBs
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