BAR65-03W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners)

SMD Type
Silicon RF Switching Diode
BAR65-03W
Diodes
Features
Low loss, low capacitance PIN-diode
Band switch for TV-tuners
Series diode for mobile communications transmit-receive switch
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maxim um Ratings Ta = 25
P aram eter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature range
Sym bol
VR
IF
Top
Tstg
Value
30
100
-55 to +125
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Reverse current
Forward voltage
Symbol
IR
VF
Diode capacitance
CT
Forward resistance
rf
Series inductance
Ls
Conditions
VR = 20 V, TA = 25
IF = 100 mA
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Unit
V
mA
Min
Typ
Max
Unit
20
nA
0.93
1
V
0.6
0.9
pF
0.57
0.8
0.65
0.95
0.56
0.9
1.8
nH
Marking
Marking
blue M
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