BAR60 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)

SMD Type
Silicon PIN Diodes
BAR60;BAR61
Features
RF switch
RF attenuator for frequencies above 10 MHz
Diodes
Unit: mm
Absolute Maxim um Ratings Ta = 25
Param eter
Reverse voltage
Forward current
Total power dissipation, TS 65 (Note 1)
Junction tem perature
Storage tem perature range
Operating tem perature range
Junction - am bient¹⁾
Junction - soldering point
Note
1.Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VR
IF
P tot
Tj
T stg
Top
Rth JA
Rth JS
V a lu e
100
140
250
150
-55 to +150
-55 to +150
580
340
Unit
V
mA
mW
K/W
K/W
Electrical Characteristics Ta = 25
Parameter
Reverse current
Forward voltage
Diode capacitance
Zero bias conductance
Charge carrier life time
Differential forward resistance
Symbol
Conditions
Min
Typ
Max
Unit
VR = 50 V
IR
VR = 100 V
100
nA
1
A
VF
IF = 100 mA
1.25
V
VR = 50 V, f = 1 MHz
CT
VR = 0, f = 100 MHz
0.25
0.5
pF
0.2
gp
VR=0 V,f=100 MHz
50
S
ôL
IF = 10 mA, IR = 6 mA
1
S
f = 100 MHz, IF = 0.01 mA
2800
IF = 0.1 mA
380
rf
IF = 1.0 mA
45
IF = 10 mA
7
Marking
Type
Marking
BAR60
60
BAR61
61
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