BAP70-03 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon PIN diode

SMD Type
Silicon PIN diode
BAP70-03
Diodes
Features
High voltage, current controlled RF resistor forattenuators
Low diode capacitance
Very low series inductance.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
50
V
continuous forward current
IF
100
mA
total power dissipation
Ts = 90
Ptot
500
mW
storage temperature
Tstg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
Rth j-s
120
K/W
Electrical Characteristics Ta = 25
Parameter
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
Symbol
Conditions
Typ
Max
Unit
VF
IF = 50 mA
0.95
1.1
V
IR
VR = 30 V
20
nA
VR = 0; f = 1 MHz
570
VR = 1 V; f = 1 MHz
400
Cd
fF
VR = 5 V; f = 1 MHz
270
VR = 20V; f = 1 MHz
200
250
IF = 0.5 mA; f = 100 MHz
77
100
IF = 1 mA; f = 100 MHz
40
50
rD
IF = 10 mA; f = 100 MHz
5.4
7
IF = 100 mA; f = 100 MHz
1.4
1.9
when switched from IF = 10 mA to IR = 6 mA;
L
1.25
ìs
RL = 100 ;measured at IR = 3 mA
LS
IF = 100 mA; f = 100 MHz
1.5
nH
Marking
Marking
A9
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