BAP70-02 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon PIN diode

SMD Type
Silicon PIN diode
BAP70-02
Features
High voltage, current controlled RF resistor for attenuators
Low diode capacitance
Very low series inductance.
Diodes
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
continuous reverse voltage
VR
continuous forward current
IF
total power dissipation
Ts = 90
Ptot
storage temperature
Tstg
-65
junction temperature
Tj
-65
thermal resistance from junction to soldering point
Rth j-s
Max
50
100
415
+150
+150
145
Unit
V
mA
mW
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
Unit
forward voltage
VF
IF = 50 mA
0.9
1.1
V
reverse leakage current
IR
VR =50 V
20
nA
VR = 0; f = 1 MHz
570
VR = 1 V; f = 1 MHz
400
diode capacitance
Cd
fF
VR = 5 V; f = 1 MHz
270
VR = 20 V; f = 1 MHz
200
250
IF = 0.5 mA; f = 100 MHz; note 1
77
100
diode forward resistance
rD
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
40
50
5.4
7
IF = 100 mA; f = 100 MHz; note 1
1.4
1.9
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
L
1.25
s
RL = 100 ,measured at IR = 3 mA
series inductance
LS
IF = 100 mA; f = 100 MHz
0.6
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
K8
www.kexin.com.cn ¹