BAP64-06 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon PIN diode

SMD Type
Silicon PIN diode
BAP64-06
Diodes
Features
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Symbol
Min
VR
IF
Ptot
Tstg
-65
Tj
-65
Rth j-s
Max
Unit
175
V
100
mA
250
mW
+150
+150
220
K/W
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
forward voltage
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
VR
VR = 175 V
VR = 20 V
10
A
1
VR = 0; f = 1 MHz
0.52
diode capacitance
Cd
VR = 1 V; f = 1 MHz
0.37
pF
VR = 20 V; f = 1 MHz
0.23
0.35
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
diode forward resistance
rD
IF = 10 mA; f = 100 MHz; note 1
10
20
2
3.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
when switched from IF = 10 mA to
charge carrier life time
L
1.55
s
IR = 6mA; RL = 100 ,measured at IR = 3 mA
series inductance
LS
1.4
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
6Kp
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