BA779 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Silicon PIN Diodes

SMD Type
Silicon PIN Diodes
BA779;BA779S
Diodes
Features
Wide frequency range 10 MHz to 1 GHz
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Forward Current
Junction Temperature
Storage temperature range
Junction ambient
Symbol
Test Conditions
Value
Unit
VR
30
V
IF
50
mA
Tj
125
Tstg
-55 to +125
RthJA on PC board 50mm 50mm 1.6mm
500
K/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward Voltage
VF
IF = 20 mA
1
V
Reverse Current
IR
VR = 30 V
50
nA
Diode capacitance
CD
f = 100 MHz, VR = 0
0.5
pF
Differential forward resistance
rf
f = 100 MHz, IF = 1.5 mA
50
BA799
5
Reverse impedance
zr
f = 100 MHz, VR = 0
K
BA799S
9
Minority carrier lifetime
ô
IF = 10 mA, IR = 10 mA
4
S
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