BA592 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Band-switching diode

SMD Type
Band-switching diode
BA592
Diodes
Features
Small plastic SMD package
Low diode capacitance
Low diode forward resistance
Small inductance.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Total power dissipation
Storage temperature
Junction temperature
thermal resistance from junction to soldering point
Symbol
VR
IF
Ptot
Tstg
Tj
Rth j-s
Conditions
Ts = 90
Min
Max
Unit
30
V
100
mA
500
mW
-65
+150
-65
+150
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 10 mA
1
V
Reverse current
IR
VR = 20 V
20
nA
Diode capacitance
VR = 1 V; f = 1 MHz;note 1
0.92
1.4
Cd
pF
VR = 3 V; f = 1 MHz;note 1
0.6
0.85
1.1
Diode forward resistance
IF = 3 mA; f = 100 MHz;note 1
rD
IF = 10 mA; f = 101 MHz;note 1
0.45
0.7
0.36
0.5
Reverse resistance
1/gp
VR = 1 V; f = 100 MHz;note 1
100
K
Series inductance
Ls
2
nH
Note
1.Guaranteed on AQL basis; inspection level S4, AQL 1.0.
Marking
Marking
A2
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