BA591 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Band-switching diode

SMD Type
Band-switching diode
BA591
Diodes
Features
Very small plastic SMD package
Low diode capacitance:max. 1.05 pF
Low diode forward resistance:max. 0.7
Small inductance.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Total power dissipation
Storage temperature
Junction temperature
thermal resistance from junction to soldering point
Symbol
VR
IF
Ptot
Tstg
Tj
Rth j-s
Conditions
Ts = 90
Min
Max
Unit
30
V
100
mA
500
mW
-65
+150
-65
+150
120
K/W
Electrical C haracteristics Ta = 25
Param eter
S ym bol
C o n d itio n s
Forward voltage
VF
IF = 10 m A
Reverse current
IR
VR = 20 V
f = 1 M Hz; note 1
Diode capacitance
Cd
VR = 1 V
VR = 3 V
f = 100 M Hz; note 1
Diode forward resistance
rD
IF = 3 m A
IF =10 m A
Reverse resistance
1/gp
VR = 1 V; f = 100 MHz
Series inductance
Ls
N o te
1.G uaranteed on AQ L basis; inspection level S4, AQ L 1.0.
Marking
Marking
A1
Typ
0.8
0.65
0.45
0.36
100
2
Max
1
20
1.05
0.9
0.7
0.5
U n it
V
nA
pF
pF
K
nH
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