AOI444 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
N-Channel MOSFET
AOI444 (KOI444)
TO-251
MOSFET
Unit:mm
■ Features
● VDS (V) = 60V
● ID = 12 A (VGS = 10V)
● RDS(ON) ＜ 60mΩ (VGS = 10V)
● RDS(ON) ＜ 85mΩ (VGS = 4.5V)
D
1 23
123
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc=25℃
Continuous Drain Current
Tc=100℃
Ta=25℃
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Ta=70℃
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Tc=25℃
Tc=100℃
Ta=25℃
Ta=70℃
t ≤ 10s
Steady-State
Symbol
VDS
VGS
ID
IDM
IAS,IAR
EAS,EAR
PD
RthJA
RthJC
TJ
Tstg
Rating
60
±20
12
9
4
3
30
19
18
20
10
2.1
1.3
30
60
7.5
175
-55 to 175
Unit
V
A
mJ
W
℃/W
℃
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