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AO4886 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 100V Dual N-Channel MOSFET | |||
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SMD Type
N-Channel Enhancement MOSFET
AO4886 (KO4886)
MOSFET
â Features
â VDS (V) = 100V
â ID = 3.3A (VGS = 10V)
â RDS(ON) ï¼ 80mΩ (VGS = 10V)
â RDS(ON) ï¼ 91mΩ (VGS = 4.5V)
Top View
S2 1
8
G2 2
7
S1 3
6
G1 4
5
D2
D2
D1
D1 G1
D1
G2
S1
SOP-8
D2
S2
1.50 0.15
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25â
TA=70â
Pulsed Drain Current *1
Avalanche Current *1
Avalanche Energy L=0.1mH *1
Power Dissipation *2
TA=25â
TA=70â
Thermal Resistance.Junction- to-Ambient *3
tâ¤10S
Steady-State *4
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS,IAR
EAS,EAR
PD
RthJA
RthJC
TJ
Tstg
Rating
100
±20
3.3
2.7
17
14
10
2
1.28
62.5
90
40
150
-55 to 150
Unit
V
A
A
mJ
W
â/W
â
*1 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
Ratings are based on low frequency and duty cycles to keep initial TJ=25°C.
*2 The power dissipation PD is based on TJ(MAX)=150°C, using ⤠10s junction-to-ambient thermal resistance.
*3 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
*4 The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
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