AO4606 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

SMD Type
Complementary Trench MOSFET
AO4606 (KO4606)
MOSFET
■ Features
● N-Channel：VDS=30V ID=6A
RDS(ON) ＜ 30mΩ (VGS = 10V)
RDS(ON) ＜ 42mΩ (VGS = 4.5V)
● P-Channel：VDS=-30V ID=-6.5A
RDS(ON) ＜ 28mΩ (VGS =-10V)
RDS(ON) ＜ 44mΩ (VGS =-4.5V)
D2
D1
SOP-8
1.50 0.15
1 Source2
2 Gate2
3 Source1
4 Gate1
8 Drain2
7 Drain2
6 Drain1
5 Drain1
G2
G1
S2
S1
N-channel
P-channel
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t ≤ 10s
Steady-State
Thermal Resistance.Junction- to-Lead Steady-State
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
RthJA
RthJL
TJ
Tstg
N-Channel P-Channel
30
-30
±20
6
-6.5
5
-5.3
30
-30
10
23
5
26
2
1.3
62.5
90
40
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
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