AO3419 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFIECT
P-Channel Enhancement MOSFET
AO3419 (KO3419)
Features
VDS (V) = -20V
ID = -3.5 A
RDS(ON) 75m (VGS = -10V)
RDS(ON) 95m (VGS = -4.5V)
RDS(ON) 145m (VGS = -2.5V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
12
Continuous Drain TA=25
Current *1
TA=70
-3.5
ID
-2.8
Pulsed Drain Current *2
IDM
-15
Power Dissipation *1 TA=25
TA=70
1.4
PD
0.9
Thermal Resistance.Junction-to-Ambient
R JA
125
Thermal Resistance.Junction-to-Case
R JC
60
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R JA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
Unit
V
V
A
W
/W
/W
Unit: mm
0.1 +0.05
-0.01
1^1.. ^BG^asa^ete
22..ESmiotutrecre
33..cDolrlaeicntor
www.kexin.com.cn ¹