AO3414-3 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
AO3414 (KO3414)
MOSFIECT
Features
VDS (V) = 20V
ID = 4.2A (VGS=4.5V)
RDS(ON) 50m (VGS = 4.5V)
RDS(ON) 63m (VGS = 2.5V)
D
RDS(ON) 87m (VGS = 1.8V)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8
Continuous Drain TA=25
Current *1
TA=70
4.2
ID
3.2
Pulsed Drain Current *2
IDM
15
Power Dissipation *1 TA=25
TA=70
1.4
PD
0.9
Themal Resistance.Junction-to-Ambient *1
RthJA
125
Themal Resistance.Junction-to-Case
RthJC
80
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R èJA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25
Unit
V
V
A
W
/W
/W
1. Gate
2. Source
3. Drain
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