AMS6006 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
AMS6006 (KMS6006)
■ Features
● VDS (V) = 60V
● ID = 6.3 A (VGS = 10V)
● RDS(ON) ＜ 18mΩ (VGS = 10V)
● RDS(ON) ＜ 20mΩ (VGS = 4.5V)
● Super Low Gate Charge
SOP-8
MOSFET
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note.1)
Pulsed Drain Current
(Note.2)
Ta=25℃
Ta=70℃
Avalanche Current
Power Dissipation
(Note.3)
Single Pulse Avalanche Energy (Note 4)
Ta=25℃
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
(Note.1)
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
PD
EAS
RthJA
RthJC
TJ
Tstg
Rating
60
±20
6.3
5
32
28
1.5
67
85
25
150
-55 to 150
Unit
V
A
W
mJ
℃/W
℃
Note.1: The data tested by surface mounted on a 1 inch ² FR-4 board with 2OZ copper.
Note.2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
Note.3: The power dissipation is limited by 150°C junction temperature
Note.4: The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=28A
www.kexin.com.cn ¹