2SK680A Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SMD Type
MOSFET
MOS Field Effect Transistor
2SK680A
Features
Directly driven by Ics having a 5V power source.
Not necessary to consider driving current because of
its high input impeance.
Has low on-state resistance
RDS(on)=1.0ÙMAX. @VGS=4.0V,ID=0.5A
RDS(on)=0.70ÙMAX. @VGS=10V,ID=0.5A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
30
20
1.0
2.0
2.0
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=30V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=0.5A
VGS=4V,ID=0.5A
VGS=10V,ID=0.5A
VDS=5.0V,VGS=0,f=1MHZ
ID=0.5A,VGS(on)=10V,RG=10
,VDD=25V,RL=50Ù
Unit
V
V
A
A
W
Min Typ Max Unit
10
A
10
A
1.0 1.6 2.5 V
0.4
S
0.6 1.0 Ù
0.4 0.7 Ù
130
pF
70
pF
30
pF
12
ns
44
ns
310
ns
160
ns
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