2SK3900 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3900
Features
Low On-state resistance
RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A)
RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A)
Low C iss: C iss =3500 pF TYP.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Rating
Unit
60
V
20
V
82
A
246
A
1.5
W
104
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=41A
VGS=10V,ID=41A
VGS=4.5V,ID=41A
VDS=10V,VGS=0,f=1MHZ
ID=41A,VGS(on)=10V,RG=0 ,VDD=30V
VDD = 48V
VGS = 10 V
ID =82A
Min Typ
1.5 2.0
28.1 56
6.3
7.4
3500
660
240
18
11
62
5.5
65.5
11.5
16.5
Max
10
10
2.5
8.0
10
Unit
A
A
V
S
mÙ
mÙ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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