2SK3899 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3899
Features
Low On-state resistance
RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A)
Low C iss: C iss = 5500 pF TYP.
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
84
A
Idp *
336
A
1.5
PD
W
146
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
VGS=4.5V,ID=42A
VDS=10V,VGS=0,f=1MHZ
ID=42A,VGS(on)=10V,RG=0 ,VDD=30V
VDD = 48V
VGS = 10 V
ID =84A
Min Typ Max Unit
10
A
10
A
1.5 2.0 2.5 V
35 70
S
4.2 5.3 m Ù
4.9 6.5 m Ù
5500
pF
1050
pF
350
pF
19
ns
13
ns
91
ns
10
ns
96
nC
18
nC
23.5
nC
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