2SK3794 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3794
Features
Low On-state resistance
RDS(on)1 = 44 mÙ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 mÙ MAX. (VGS = 4.0 V, ID = 10 A)
Low C iss: C iss = 760 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
20
A
Idp *
50
A
1.5
PD
W
30
Tch
150
Tstg
-55 to +150
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=60V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
VGS=4.0V,ID=10A
VDS=10V,VGS=0,f=1MHZ
ID=10A,VGS(on)=10V,RG=0 ,VDD=30V
VDD = 48V
VGS = 10 V
ID =10A
Min Typ Max Unit
10
A
10
A
2.5 3.5 4.5 V
7.0 15
S
35 44 m Ù
54 78 m Ù
760
pF
150
pF
71
pF
13
ns
170
ns
43
ns
34
ns
17
nC
3.0
nC
4.7
nC
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