2SK3636 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon N-channel Power MOSFET

SMD Type
TransistIoCrs
Silicon N-channel Power MOSFET
2SK3636
Features
Avalanche energy capacity guaranteed: EAS 20 mJ
Gate-source surrender voltage VGSS = 30 V guaranteed
High-speed switching: tf = 50 ns
No secondary breakdown
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation Ta = 25
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
800
V
VGSS
30
V
ID
3
A
IDP
6
A
EAS
20
mJ
2
PD
W
35
Tch
150
Tstg
-55 to +150
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