2SK3573 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3573
Features
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 4.0m MAX. (VGS = 10 V, ID = 42A)
Low gate charge
QG = 68nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)
Built-in gate protection diode
Surface mount device available
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
20
V
VGSS
20
V
ID
83
A
Idp *
332
A
105
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=20V,VGS=0
10
A
VGS= 20V,VDS=0
100 A
VDS=10V,ID=1mA
1.5
2.5 V
VDS=10V,ID=42A
27
S
VGS=10V,ID=42A
2.9 4.0 m
VGS=4.5V,ID=42A
3.8 6.0 m
4000
pF
VDS=10V,VGS=0,f=1MHZ
1550
pF
570
pF
23
ns
23
ns
ID=42A,VGS(on)=10V,RG=10 ,VDD=10V
110
ns
40
ns
VDD = 16 V
VGS = 10 V
ID = 83 A
68
nC
12
nC
18
nC
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