2SK3507 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOS Field Effect Transistor
2SK3507
MOSFICET
Features
4.5 V drive available
Low on-state resistance
RDS(on)1 = 45 m MAX. (VGS = 10 V, ID = 11 A)
Low gate charge
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
Built-in G-S protection diode
Surface mount package available
Absolute Maximum Ratings Ta = 25
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
30
V
VGSS
16
V
ID
22
A
Idp *
45
A
20
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=30V,VGS=0
10
A
VGS= 16V,VDS=0
1
A
VDS=10V,ID=1mA
1.5
2.5 V
VDS=4.0V,ID=11A
6
S
VGS=10V,ID=11A
28 45 m
VGS=4.5V,ID=11A
46 76 m
360
pF
VDS=10V,VGS=0,f=1MHZ
125
pF
65
pF
6.6
ns
3.6
ns
ID=11A,VGS(on)=10V,RL=10 ,VDD=15V
16
ns
5.3
ns
8.5
nC
ID =22A, VDD =24V, VGS = 10 V
2
nC
2.1
nC
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