2SK3503 Datasheet, PDF (1/3 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

SMD Type
MOSFET
N-Channel MOSFET
2SK3503
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
U nit: m m
0.15±0.05
■ Features
● VDS (V) = 16V
● ID = 100 mA (VGS = 1.5V)
● RDS(ON) ＜ 50Ω (VGS = 1.5V)
● RDS(ON) ＜ 15Ω (VGS = 2.5V)
● RDS(ON) ＜ 12Ω (VGS = 4V)
Gate
2
1
Drain
Body
Diode
3
0.5 ^+0.1
-0.1
0.3±0.05
■ Absolute Maximum Ratings Ta = 25℃
Source
1. Gate
2. Source
3. Drain
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
16
V
VGS
±7
Continuous Drain Current
Pulsed Drain Current (Note.1)
Tc=25℃
ID
IDM
100
mA
400
Power Dissipation
Tc=25℃
PD
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 μs, Duty Cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±7V
VDS=3V , ID=10μA
VGS=1.5V, ID=1 mA
VGS=2.5V, ID=10 mA
VGS=4V, ID=10 mA
VDS=3V, ID=10 mA
VGS=0V, VDS=3V, f=1MHz
VGS=3V, VDS=3V, ID=10mA,RG=10Ω
Min Typ Max Unit
16
V
1
uA
±3
0.5 0.8 1.1 V
20 50
7 15 Ω
5 12
20
mS
10
13
pF
3
15
70
ns
100
110
■ Marking
Marking
E1
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