2SK3494 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – N-channel enhancement mode MOSFET

SMD Type
MOSFET
N-Channel Enhancement Mode MOSFET
2SK3494
Features
Low on-resistance, low Qg
High avalanche resistance
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
Symbol
Rating
Unit
VDSS
250
V
VGSS
30
V
ID
20
A
Idp *
80
A
50
PD
W
1.4
Tch
150
Tstg
-55 to +150
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
Vth
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
VDS=25V,VGS=0,f=1MHZ
ID=10A,VGS(on)=10V,RL=10
,VDD=100V
ID =10A, VDD =100V, VGS = 10 V
Min Typ Max Unit
10
A
1
A
2.0
4.0 V
7 14
S
82 105 m
2450
pF
356
pF
40
pF
36
ns
20
ns
184
ns
29
ns
41
nC
8.4
nC
14
nC
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