2SK3484 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOS Field Effect Transistor
2SK3484
MOSFICET
Features
Super low on-state resistance:
RDS(on)1 = 125m MAX. (VGS = 10 V, ID = 8A)
RDS(on)2 = 148m MAX. (VGS = 4.5 V, ID = 8A)
Low Ciss: Ciss = 900 pF TYP.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
16
A
Idp *
22
A
30
PD
W
1.0
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=8A
VGS=10V,ID=8A
VGS=4.5V,ID=8A
VDS=10V,VGS=0,f=1MHZ
ID=8A,VGS(on)=10V,RG=0 ,VDD=50V
ID =16A, VDD =80V, VGS = 10 V
Min Typ Max Unit
10
A
10
A
1.5 2.0 2.5 V
4.5 9.5
S
100 125 m
110 148 m
900
pF
110
pF
50
pF
9.0
ns
5.0
ns
30
ns
4.0
ns
20
nC
3.0
nC
5.0
nC
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