2SK3481 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3481
Features
Super low on-state resistance:
RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 15A)
RDS(on)2 = 58 m MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 2300 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
30
A
Idp *
60
A
56
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=15A
VGS=10V,ID=15A
VGS=4.5V,ID=15A
VDS=10V,VGS=0,f=1MHZ
ID=15A,VGS(on)=10V,RG=0 ,VDD=50V
ID =30A, VDD =80V, VGS = 10 V
Min Typ Max Unit
10
A
10
A
1.5 2.0 2.5 V
9 18
S
40 50 m
44 58 m
2300
pF
230
pF
120
pF
13
ns
10
ns
53
ns
5.0
ns
48
nC
7.0
nC
12
nC
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