2SK3456 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
MOS Field Effect Transistor
2SK3456
MOSFET
Features
Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A)
Avalanche capability ratings
Surface mount package available
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
500
V
VGSS
30
V
ID
12
A
Idp *
36
A
100
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=500V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=6.0A
VGS=10V,ID=6.0A
VDS=10V,VGS=0,f=1MHZ
ID=6.0A,VGS(on)=10V,RG=10
,VDD=150V
ID =12A, VDD =400V, VGS = 10 V
Min Typ Max Unit
10
A
100 A
2.5
3.5 V
2.0
S
0.48 0.60
1620
pF
250
pF
10
pF
24
ns
18
ns
50
ns
15
ns
30
nC
9
nC
11
nC
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