2SK3435 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3435
Features
Super low on-state resistance:
RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A)
RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A)
Low Ciss: Ciss =3200 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
80
A
Idp *
320
A
84
PD
W
1.5
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=40A
21 43
S
VGS=10V,ID=40A
11 14 m
VGS=4V,ID=40A
16 22 m
3200
pF
VDS=10V,VGS=0,f=1MHZ
520
pF
260
pF
80
ns
1200
ns
ID=40A,VGS(on)=10V,RG=10 ,VDD=30V
200
ns
350
ns
60
nC
ID =80A, VDD =48V, VGS = 10 V
10
nC
16
nC
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