2SK3424 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

SMD Type
MOS Field Effect Transistor
2SK3424
MOSFET
Features
4.5-V drive available
Low on-state resistance
RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Rating
Unit
30
V
20
V
48
A
192
A
50
W
1.5
150
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=30V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5
2.5 V
VDS=10V,ID=24A
13
S
VGS=10V,ID=24A
7.7 11.5 m
VGS=4.5V,ID=24A
10.5 17.0 m
1900
pF
VDS=10V,VGS=0,f=1MHZ
580
pF
270
pF
14
ns
13
ns
ID=24A,VGS(on)=10V,RG=10 ,VDD=15V
61
ns
22
ns
34
nC
ID =48A, VDD =24V, VGS = 10 V
6.4
nC
9.1
nC
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