2SK3386 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3386
Features
Low on-resistance
RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A)
RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Rating
Unit
60
V
20
V
30
A
100
A
36
W
1.0
150
-55 to +150
Unit: mm
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=17A
10 19
S
VGS=10V,ID=17A
17 21 m
VGS=4.0V,ID=17A
25 36 m
2100
pF
VDS=10V,VGS=0,f=1MHZ
340
pF
170
pF
32
ns
310
ns
ID=17A,VGS(on)=10V,RG=10 ,VDD=30V
98
ns
100
ns
39
nC
ID =34A, VDD = 48 V, VGS = 10 V
7.0
nC
12
nC
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