2SK3377 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3377
Features
Low on-resistance
RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A)
Low Ciss : Ciss = 760 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
20
A
Idp *
50
A
30
PD
W
1.0
Tch
150
Tstg
-55 to +150
Unit: mm
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=10A
5 10
S
VGS=10V,ID=10A
35 44 m
VGS=4.0V,ID=10A
54 78 m
760
pF
VDS=10V,VGS=0,f=1MHZ
150
pF
71
pF
13
ns
170
ns
ID=10A,VGS(on)=10V,RG=10 ,VDD=30V
43
ns
34
ns
17
nC
ID =20 A, VDD = 48 V, VGS = 10 V
3.0
nC
4.7
nC
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