2SK3365 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOS Field Effect Transistor
2SK3365
MOSFICET
Features
Super low on-state resistance:
RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21m MAX. (VGS = 4.5 V, ID = 15A)
RDS(on)3 = 29m MAX. (VGS = 4 V, ID = 15A)
Low Ciss: Ciss = 1300 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
30
V
VGSS
20
V
ID
30
A
Idp *
120
A
1.0
PD
W
36
Tch
150
Tstg
-55 to +150
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=30V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=15A
8.0 16.0
S
VGS=10V,ID=15A
11.5 14 m
VGS=4.5V,ID=15A
15.2 21 m
VGS=4.0V,ID=15A
18 29 m
1300
pF
VDS=10V,VGS=0,f=1MHZ
405
pF
190
pF
37
ns
500
ns
ID=15A,VGS(on)=10V,RG=10 ,VDD=15V
75
ns
95
ns
25
nC
VDD = 24V, VGS = 10 V, ID = 30A
4.5
nC
7.0
nC
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