2SK3353 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3353
Features
Super low on-state resistance:
RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 14 m MAX. (VGS = 4 V, ID = 41 A)
Low Ciss: Ciss = 4650 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS(AC)
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Rating
Unit
60
V
20
V
82
A
328
A
1.5
W
95
150
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
100
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
2.5
3.5 V
VDS=10V,ID=41A
30 50
S
VGS=10V,ID=41A
7.5 9.5 m
VGS=4V,ID=41A
10.5 14 m
4650
pF
VDS=10V,VGS=0,f=1MHZ
780
pF
380
pF
100
ns
1550
ns
ID=41A,VGS(on)=10V,RG=10 ,VDD=30V
280
ns
420
ns
90
nC
VDD = 42V, VGS = 10 V, ID = 82A
14
nC
38
nC
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