2SK3325 Datasheet, PDF (1/2 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
TransistIoCrs
MOS Field Effect Transistor
2SK3325
Features
Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: 30 V
Low on-state resistance
RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
30
V
Drain Current(DC)
ID(DS)
10
A
Drain Current(pulse) *1
ID(pulse)
40
A
Total Power Dissipation (TA = 25 )
Total Power Dissipation (TC = 25 )
1.5
PT
W
85
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Single Avalanche Current *2
IAS
10
A
Single Avalanche Energy *2
EAS
10.7
mJ
*1. PW 10ìs,Dduty cycle 1%.
*2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V 0 V
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