2SK3299 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOS Field Effect Transistor
2SK3299
MOSFET
Features
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Surface mount package available
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
600
V
VGSS
30
V
ID
10
A
Idp *
40
A
1.5
PD
W
75
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=600V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5.0A
VGS=10V,ID=5.0A
VDS=10V,VGS=0,f=1MHZ
ID=5.0A,VGS(on)=10V,RG=10
,VDD=150V
Min Typ Max Unit
100
A
100 A
2.5
3.5 V
3.2
S
0.68 0.75
1580
pF
280
pF
25
pF
27
ns
17
ns
66
ns
24
ns
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