2SK3296 Datasheet, PDF (1/1 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SMD Type
MOS Field Effect Transistor
2SK3296
MOSFET
Features
4.5 V drive available
Low on-state resistance
RDS(on)1 = 12m MAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
20
V
VGSS
20
V
ID
35
A
Idp *
140
A
1.5
PD
W
40
Tch
150
Tstg
-55 to +150
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
Min Typ Max Unit
VDS=20V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.0
2.5 V
VDS=10V,ID=18A
9.0
S
VGS=10V,ID=18A
8.5 12 m
VGS=4.5V,ID=18A
12 19 m
1300
pF
VDS=10V,VGS=0,f=1MHZ
570
pF
300
pF
70
ns
1220
ns
ID=18A,VGS(on)=10V,RG=10 ,VDD=10V
100
ns
180
ns
www.kexin.com.cn ¹