2SK3295 Datasheet, PDF (1/2 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

SMD Type
TransistIoCrs
MOS Field Effect Transistor
2SK3295
Features
4.5 V drive available
Low on-state resistance
RDS(on)1 = 18 mÙ MAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(pulse) *
Total Power Dissipation (TA = 25 )
Total Power Dissipation (TC = 25 )
Channel Temperature
Storage temperature
* PW 10ìs,Dduty cycle 1%.
Symbol
Rating
Unit
VDSS
20
V
VGSS
20
V
ID(DS)
35
A
ID(pulse)
140
A
1.5
PT
W
35
Tch
150
Tstg
-55 to +150
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