2SK3269-ZJ Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK3269-ZJ
MOSFET
■ Features
● VDS (V) = 100V
● ID = 25 A (VGS = 10V)
● RDS(ON) ＜ 100mΩ (VGS = 10V)
D
● Low on-resistance, Low Qg
● High avalanche resistance
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
Tc = 25℃
PD
Ta = 25℃
Single Avalanche Energy (Note.1)
EAS
Thermal Resistance.Junction- to-Ambient
RthJA
Thermal Resistance.Junction- to-Case
RthJC
Junction Temperature
TJ
Storage Temperature Range
Tstg
Rating
100
±20
25
100
40
1.4
22.5
89.3
3.125
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Test Conditions
ID=1mA, VGS=0V
VDS=80V, VGS=0V
VDS=0V, VGS=±20V
VDS=10V , ID=1mA
VGS=10V, ID=12A
VGS=10V, ID=12A
VGS=0V, VDS=10V, f=1MHz
VGS=10V, VDS=30V, ID=12A,RG=2.5Ω
IS=15A,VGS=0V
Unit
V
A
W
mJ
℃/W
℃
Min Typ Max Unit
100
V
10 uA
±1 uA
2
4
V
100 mΩ
6 11
S
960
285
pF
85
15
10
ns
65
35
1.4 V
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