2SK3225 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOS Field Effect Transistor
2SK3225
MOSFICET
Features
Low On-State Resistance
RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17A)
RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
60
V
VGSS(AC)
20
V
VGSS(DC)
+20,-10
V
ID
34
A
Idp *
136
A
40
PD
W
2.0
Tch
150
Tstg
-55 to +150
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1..0 1.5 2.0 V
VDS=10V,ID=17A
13 27
S
VGS=10V,ID=17A
13 18 m
VGS=4V,ID=17A
18 27 m
2100
pF
VDS=10V,VGS=0,f=1MHZ
550
pF
220
pF
32
ns
300
ns
ID=17A,VGS(on)=10V,RG=10 ,VDD=30V
110
ns
140
ns
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