2SK3147S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon N Cannel MOSFET

SMD Type
Silicon N Cannel MOSFET
2SK3147S
MOSFICET
Features
Low on-resistance
RDS = 0.1 typ.
High speed switching
4 V gate drive device can be driven from 5 V source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
5
A
Idp *
20
A
PD
20
W
Tch
150
Tstg
-55 to +150
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
VDS=100V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3A
VGS=10V,ID=3A
VGS=4V,ID=3A
VDS=10V,VGS=0,f=1MHZ
ID=3A,VGS(on)=10V,RL=10
Min Typ Max Unit
10
A
10
A
1..0
2.5 V
3.5 6
S
0.1 0.13
0.13 0.18
420
pF
185
pF
100
pF
10
ns
35
ns
110
ns
60
ns
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