2SK3116 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET

SMD Type
MOSFET
MOS Field Effect Transistor
2SK3116
Features
Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A)
Avalanche capability ratings
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
600
V
VGSS
30
V
ID
7.5
A
Idp *
30
A
1.5
PD
W
70
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
Min Typ Max Unit
VDS=600V,VGS=0
100
A
VGS= 30V,VDS=0
100 A
VDS=10V,ID=1mA
2.5
3.5 V
VDS=10V,ID=3.75A
2.0
S
VGS=10V,ID=3.75A
0.9 1.2
1100
pF
VDS=10V,VGS=0,f=1MHZ
200
pF
20
pF
18
ns
ID=3.75A,VGS(on)=10V,VDD=150V,RG=1
15
ns
0 ,RL=50
50
ns
15
ns
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