2SK3050 Datasheet, PDF (1/1 Pages) Rohm – Small switching (600V, 2A)

SMD Type
TransistIoCrs
Small Switching
2SK3050
Features
Low on-resistance.
Fast switching speed.
Wide SOA (safe operating area).
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
Easy to use in parallel.
Silicon N-channel MOSFET
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
30
V
Drain Current(DC)
ID
2
A
Drain Current (pulse) *
IDP
6
A
Body to drain diode reverse drain current
IDR
2
A
Body to drain diode reverse drain current(pulse) *
IDRP
6
A
Total power dissipation (Tc=25 )
PD
20
W
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW 10ìs,Dduty cycle 1%.
Electrical Characteristics Ta = 25
Parameter
Gate to source leak current
Drain to source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static Drain to source on stateresistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Symbol
Testconditons
IGSS VGS= 30V, VDS=0V
V(BR)DSS ID=1mA, VGS=0V
IDSS VDS=600V, VGS=0V
VGSth VDS=10V, ID=1mA
RDS(on) ID=1A, VGS=10V
|yfs| ID=1A, VDS=10V
Ciss VDS=10V
Coss VGS=0V
Crss f=1MHz
td(on) VGS=10V
tr RL=300
td(off) RG=10
tf ID=1A, VDD=300V
trr IDR=2A, VGS=0V
Qrr di/dt=100A/ s
Min Typ Max Unit
100 nA
600
V
100
A
2.0
4.0 V
4.4 5.5
0.5 1.0
S
280
pF
48
pF
16
pF
12
ns
17
ns
29
ns
105
ns
460
ns
2.0
C
www.kexin.com.cn ¹