2SK3031 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

SMD Type
MOSFICET
Silicon N-Channel Power F-MOSFET
2SK3031
Features
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
15
A
Idp *
30
A
20
W
PD
1
W
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Symbol
VDSS
IDSS
IGSS
VGS(th)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
Min Typ Max Unit
ID=1mA,VGS=0
100
V
VDS=80V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1
2.5 V
VDS=10V,ID=8A
4 7.5
S
VGS=10V,ID=8A
90 135 m
VGS=4V,ID=8A
100 160 m
300
pF
VDS=10V,VGS=0,f=1MHZ
190
pF
30
pF
20
ns
85
ns
ID=8A,VGS(on)=10V,RL=3.75 ,VDD=30V
1440
ns
330
ns
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